The formation of spinel-type iron oxide thin films with (100) orientation by plasma assisted MO-CVD.
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Structural, Electrical and Optical Properties of Molybdenum Oxide Thin Films Prepared by Post-annealing of Mo Thin Films
Molybdenum thin films with 50 and 150 nm thicknesses were deposited on silicon substrates, using DC magnetron sputtering system, then post-annealed at different temperatures (200, 325, 450, 575 and 700°C) with flow oxygen at 200 sccm (standard Cubic centimeter per minute). The crystallographic structure of the films was obtained by means of x-ray diffraction (XRD) analysis. An atomic force micr...
متن کاملStructural, Electrical and Optical Properties of Molybdenum Oxide Thin Films Prepared by Post-annealing of Mo Thin Films
Molybdenum thin films with 50 and 150 nm thicknesses were deposited on silicon substrates, using DC magnetron sputtering system, then post-annealed at different temperatures (200, 325, 450, 575 and 700°C) with flow oxygen at 200 sccm (standard Cubic centimeter per minute). The crystallographic structure of the films was obtained by means of x-ray diffraction (XRD) analysis. An atomic force micr...
متن کاملstructural, electrical and optical properties of molybdenum oxide thin films prepared by post-annealing of mo thin films
molybdenum thin films with 50 and 150 nm thicknesses were deposited on silicon substrates, using dc magnetron sputtering system, then post-annealed at different temperatures (200, 325, 450, 575 and 700°c) with flow oxygen at 200 sccm (standard cubic centimeter per minute). the crystallographic structure of the films was obtained by means of x-ray diffraction (xrd) analysis. an atomic force micr...
متن کاملCopper and Copper Oxide Thin Films Obtained by Metalorganic Microwave Plasma Cvd
Microwave Plasma Enhanced Chemical Vapor Deposition (MPECVD) is an innovative technique allowing the direct preparation, at low temperature, of different valence states of copper (Cu°, Cu, Cu). The precursor used is a volatile metalorganic one (copper acetylacetonate) with helium as a carrier gas. The precursor is then transported in a remote plasma of Ar, A1/O2 or A r / ^ O gas at low pressure...
متن کاملX-ray photoelectron spectroscopic characterization of ultra-thin silicon oxide films on a Mo( 100) surface
Ultra-thin films of silicon oxides supported on a MoflOO) surface have been studied using X-ray photoelectron spectroscopy (XPS). The films were synthesized by evaporating Si onto the MO surface in oxygen ambient and were subsequently characterized using XPS with respect to the chemical states of silicon and the composition of the film. It has been found that the silicon oxide, prepared at room...
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ژورنال
عنوان ژورنال: Journal of the Japan Society of Powder and Powder Metallurgy
سال: 1988
ISSN: 0532-8799,1880-9014
DOI: 10.2497/jjspm.35.202